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Hydrogen-driven surface amorphization of the transparent oxide semiconductor thin-films for photovoltaic applications

Abstract

Crystalline transparent conductive oxides are promising candidates as front electrodes in electronic devices due to the high electron mobility and good optical transparency in the visible region. However, the rough surface morphology resulting from the grain growth during the deposition and post-annealing process triggers severe drawbacks in their thin-film applications. Here, we demonstrate the hydrogen-driven surface amorphization of the crystalline Insingle bondSnsingle bondO (c-ITO) thin film. By introducing hydrogen gas during the deposition process, the surface of the c-ITO thin film is selectively amorphized, allowing for the smooth surface morphology while preserving the advantages of the crystalline thin film. The progressive surface amorphization of c-ITO thin film offers the tunability of the work function, leading to the improved power conversion efficiency of the thin-film solar cell. Our work provides a facile method to realize the smooth surface morphology of the c-ITO thin films, which can be further utilized for a wide range of crystalline thin films for optoelectronic applications.

Funding source: Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2019R1A6A3A01091664); National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) through GCRC-SOP (No, 2011-0030013) and the Ministry of the Environment (G232019012551).
Related subjects: Applications & Pathways
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/content/journal2047
2021-04-02
2021-09-17
http://instance.metastore.ingenta.com/content/journal2047
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