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Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution

Abstract

Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the Nisingle bondS covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec−1 along with a good stability.

Funding source: National Natural Science Foundation of China (22006120) and the General Project of Chongqing Frontier and Applied Basic Research Program (cstc2020jcyj-msxmX0536).
Related subjects: Production & Supply Chain
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/content/journal2088
2021-05-13
2021-06-24
http://instance.metastore.ingenta.com/content/journal2088
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