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Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

Abstract

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO2 and C2H4 using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

Funding source: The hydrogen sensor work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370 (T. Steiner), NSF(CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 3-2930 monitored by Mr. Daniel E. Fitch , ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416. The CO2 sensor work at UF is supported by ONR Grant N000140710982 monitored by Igor Vodyanoy and the State of Florida Center of Excellence in Nano-Biosensors. The ethylene sensor work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch , ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0101438.
Countries: United States
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/content/journal3296
2009-06-15
2024-04-26
http://instance.metastore.ingenta.com/content/journal3296
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